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Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectorsMATISS, A; PROST, W; TEGUDE, F.-J et al.Electronics Letters. 2006, Vol 42, Num 10, pp 599-600, issn 0013-5194, 2 p.Article

Selective LPE-growth of In_0.53Ga_0.47 As on semi-insultating InPSCHILLING, M; SCHEMMEL, G; TEGUDE, F. -J et al.Journal of electronic materials. 1986, Vol 15, Num 5, pp 259-262, issn 0361-5235Article

ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N₂ chemistryTOPALOGLU, S; PROST, W; TEGUDE, F.-J et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1601-1605, issn 0167-9317, 5 p.Article

A new noise model of HFET with special emphasis on gate-leakageREUTER, R; VAN WAASEN, S; TEGUDE, F. J et al.IEEE electron device letters. 1995, Vol 16, Num 2, pp 74-76, issn 0741-3106Article

Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTsJIN, Z; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 5, pp 1017-1021, issn 0031-8965, 5 p.Article

Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationJIN, Z; LIU, X; PROST, W et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1088-1091, issn 0038-1101, 4 p.Article

Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiN_xJIN, Z; NEUMANN, S; PROST, W et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 409-412, issn 0038-1101, 4 p.Article

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GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFETPORGES, M; LALINSKY, T; SAFRANKOVA, J et al.Physica status solidi. A. Applied research. 1993, Vol 136, Num 1, pp K65-K69, issn 0031-8965Article

Monodisperse aerosol particle deposition : Prospects for nanoelectronicsPROST, W; KRUIS, F. E; OTTEN, F et al.Microelectronic engineering. 1998, Vol 41-42, pp 535-538, issn 0167-9317Conference Paper

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Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronics devicesSCHEFFER, F; JOSEPH, M; PROST, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 361-364Conference Paper

A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPKRÄMER, Stefan; NEUMANN, S; PROST, W et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 554-557, issn 1386-9477, 4 p.Conference Paper

Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPKRÄMER, S; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 992-996, issn 0031-8965, 5 p.Conference Paper

Highly strained In_0.5Ga_0.5P as wide-gap material on InP substrate for heterojunction field effect transistor applicationSCHEFFER, F; LINDNER, A; LIU, Q et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 326-331, issn 0022-0248Conference Paper

A nanoparticle-coated nanocrystal-gate for an InP-based heterostructure field-effect transistorDO, Q.-T; KATZER, K; MARTINEZ-ALBERTOS, J.-L et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 435-438, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Circuit and application aspects of tunnelling devices in a MOBILE configurationGLÖSEKÖTTER, P; PACHA, C; GOSER, K. F et al.International journal of circuit theory and applications. 2003, Vol 31, Num 1, pp 83-103, issn 0098-9886, 21 p.Article

InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesVELLING, P; AGETHEN, M; PROST, W et al.Journal of crystal growth. 2000, Vol 221, pp 722-729, issn 0022-0248Conference Paper

InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportVELLING, P; JANSSEN, G; AGETHEN, M et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 117-123, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangePROST, W; SCHEFFER, F; LIU, Q et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 538-543, issn 0022-0248Conference Paper

High breakdown voltage InGaAs/InAlAs HFET using In_0.5Ga_0.5P spacer layerSCHEFFER, F; HEEDT, C; REUTER, R et al.Electronics Letters. 1994, Vol 30, Num 2, pp 169-170, issn 0013-5194Article

Photoelectrical propertieds of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFETSAFRANKOVA, J; PORGES, M; LALINSKY, T et al.Physica status solidi. A. Applied research. 1993, Vol 140, Num 2, pp K111-K114, issn 0031-8965Article

Scalable Electrical Properties of Axial GaAs Nanowire pn-DiodesGUTSCHE, C; LYSOV, A; REGOLIN, I et al.Journal of electronic materials. 2012, Vol 41, Num 5, pp 809-812, issn 0361-5235, 4 p.Conference Paper